Improvement to Load-pull Technique for Design of Large-signal Amplifier in K band

نویسندگان

  • Ondřej MORÁVEK
  • Karel HOFFMANN
چکیده

An improvement to the load-pull technique for a large-signal design of a transistor amplifier is proposed. On the contrary to the current load-pull technique – a smallsignal pre-matching on the output of the transistor is applied which results in reduced demands on a maximum VSWR of the tuner. This minimizes the launcher radiation in the K band and reduces measurement uncertainty. The proposed method has been verified on a design of 22 GHz large-signal amplifier using a Excelics EPA018A-70 transistor.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Nonlinear Analysis of a Power Amplifier inc C Band and Load Pull Technique Calculation USING VOLTERRA SERIES

In recent years, nonlinear circuit analysis techniques have been extensively investigated. One of the most important reasons is the application development of solid-state devices at microwave frequencies. Different methods have been used to analysis large signal behavior of these devices. In this paper load-pull curves (one of design requirement) are obtained using Volterra series. The main adv...

متن کامل

A 28-36 GHz Optimized CMOS Distributed Doherty Power Amplifier with A New Wideband Power Divider Structure

Background and Objectives: In this paper, a new design strategy was proposed in order to enhance bandwidth and efficiency of power amplifier. Methods: To realize the introduced design strategy, a power amplifier was designed using TSMC CMOS 0.18um technology for operating in the Ka band, i.e. the frequency range of 26.5-40GHz. To design the power amplifier, first a power divider (PD) with a ver...

متن کامل

Design of an S-band Ultra-low-noise Amplifier with Frequency Band Switching Capability

In this paper, an ultra-low-noise amplifier with frequency band switching capability is designed, simulated and fabricated. The two frequency ranges of this amplifier consist of the 2.4 to 2.5 GHz and 3.1 GHz to 3.15 GHz frequency bands. The designed amplifier has a noise figure of less than 1dB, a minimum gain of 23 dB and a VSWR of less than 2 in the whole frequency band. The design process s...

متن کامل

A W-band Simultaneously Matched Power and Noise Low Noise Amplifier Using CMOS 0.13µm

A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...

متن کامل

Design and Fabrication of a 9–11 GHz Balanced Low Noise Amplifier Using HJFET

This paper describes the design of an X-band balanced low noise amplifier (LNA) using an available HJFET device. The balanced LNA consists of a pair of electrically similar transistors whose input and output signals are divided or combined by 3 dB two-stage Wilkinson power dividers. The proposed balanced LNA is fabricated and measured. The measured results show that the noise figure is 1.30 dB ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2011